FQPF47P06 / FQPF47P06ydtu thermal characteristics symbol parameter FQPF47P06 / FQPF47P06ydtu unit v dss drain-source voltage -60 v i d drain current - continuous (t c = 25c) -30 a - co ntinuous (t c = 100c) -21.2 a i dm drain current - pulsed (note 1) -120 a v gss gate-source voltage 25 v e as single pulsed avalanche energy (note 2) 820 mj i ar avalanche current (note 1) -30 a e ar repetitive avalanche energy (note 1) 6.2 mj dv/ dt peak diode recovery dv/dt (note 3) -7.0 v/ns p d power dissipation (t c = 25c) 62 w - derate above 25c 0.41 w/c t j , t stg operating and storage temperature range -55 to +175 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c s ymbol parameter typ max unit r jc thermal resistance, junction-to-case -- 2.42 c / w r ja thermal resistance, junction-to-ambient -- 62.5 c / w ? ?? ? ! !! ! ! !! ! ! !! ! ? ?? ? ! !! ! ! !! ! ! !! ! s d g FQPF47P06 / FQPF47P06ydtu p-channel mosfet description this p-channel enhancement mode power mosfet is produced using fairchild semiconductor ? s proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, audio amplifier, dc motor control, and variable switching power applications. features -30 a, -60 v, r ds(on) =26 m(max.) @v gs =-10 v, i d =-15 a low gate charge (typ. 84 nc) low crss (typ. 320 pf) 100% avalanche tested march 2013 p -channel qfet ? mosfet 175c maximum junction temperature rating -60 v, -30 a, 26 m ?2001 fairchild semiconductor corporation FQPF47P06 / FQPF47P06ydtu rev. c0 www.fairc hildsemi.com absolute ma ximum ratings t c = 25c unless otherwise noted to-220f g d s
elerical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 1.06mh, i as = -30a, v dd = -25v, r g = 25 ?, starting t j = 25c 3. i sd -47a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 a -60 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25c -- -0.06 -- v/c i dss zero gate voltage drain current v ds = -60 v, v gs = 0 v -- -- -1 a v ds = -48 v, t c = 150c -- -- -10 a i gssf gate-body leakage current, forward v gs = -25 v, v ds = 0 v -- -- -100 na i gssr gate-body leakage current, reverse v gs = 25 v, v ds = 0 v -- -- 100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = -250 a -2.0 -- -4.0 v r ds(on) static drain-source on-resistance v gs = -10 v, i d = -15 a -- 0.021 0.026 ? g fs forward transconductance v ds = -30 v, i d = -15 a -- 19 -- s dynamic characteristics c iss input capacitance v ds = -25 v, v gs = 0 v, f = 1.0 mhz -- 2800 3600 pf c oss output capacitance -- 1300 1700 pf c rss reverse transfer capacitance -- 320 420 pf switching characteristics t d(on) turn-on delay time v dd = -30 v, i d = -23.5 a, r g = 25 ? -- 50 110 ns t r turn-on rise time -- 450 910 ns t d(off) turn-off delay time -- 100 210 ns t f turn-off fall time -- 195 400 ns q g total gate charge v ds = -48 v, i d = -47 a, v gs = -10 v -- 84 110 nc q gs gate-source charge -- 18 -- nc q gd gate-drain charge -- 44 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- -30 a i sm maximum pulsed drain-source diode forward current -- -- -120 a v sd drain-source diode forward voltage v gs = 0 v, i s = -30 a -- -- -4.0 v t rr reverse recovery time v gs = 0 v, i s = -47 a, di f / dt = 100 a/ s -- 130 -- ns q rr reverse recovery charge -- 0.55 -- c (note 4) (note 4, 5) (note 4, 5) (note 4) FQPF47P06 / FQPF47P06ydtu p-channel mosfet ?2001 fairchild semic onductor corporation FQPF47P06 / FQPF47P06ydtu rev. c0 www.fairc hildsemi.com
0 102030405060708090 0 2 4 6 8 10 12 v ds = -30v v ds = -48v note : i d = -47 a -v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 7000 8000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 10 -1 10 0 10 1 10 2 175 notes : 1. v gs = 0v 2. 250 s pulse test 25 -i dr , reverse drain current [a] -v sd , source-drain voltage [v] 0 100 200 300 400 0.00 0.02 0.04 0.06 0.08 0.10 note : t j = 25 v gs = - 20v v gs = - 10v r ds(on) [ ? ], drain-source on-resistance -i d , drain current [a] 24681 0 10 -1 10 0 10 1 10 2 175 25 -55 notes : 1. v ds = -30v 2. 250 s pulse test -i d , drain current [a] -v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : - 15.0 v - 10.0 v - 8.0 v - 7.0 v - 6.0 v - 5.5 v - 5.0 v bottom : - 4.5 v notes : 1. 250 s pulse test 2. t c = 25 -i d , drain current [a] -v ds , drain-source voltage [v] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics FQPF47P06 / FQPF47P06ydtu p-channel mosfet ?2001 fairchild semic onductor corporation FQPF47P06 / FQPF47P06ydtu rev. c0 www.fairc hildsemi.com
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n ote s : 1. z jc (t) = 2.42 /w m ax. 2. d u ty f actor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), therm al response t 1 , s q u are w ave p u lse d ura tion [sec] 25 50 75 100 125 150 175 0 5 10 15 20 25 30 -i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 100 ms dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 175 o c 3. single pulse -i d , drain current [a] -v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 notes : 1. v gs = -10 v 2. i d = -23.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = -250 a -bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] typical characteristics (continued) figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature figure 11. transient thermal response curve t 1 p dm t 2 FQPF47P06 / FQPF47P06ydtu p-channel mosfet ?2001 fairchild semiconductor corporation FQPF47P06 / FQPF47P06ydtu rev. c0 www.fairc hildsemi.com
charge v gs -10v q g q gs q gd -3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs -10v q g q gs q gd -3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v ds v gs 10% 90% t d(on) t r t on t off t d(off) t f v dd -10v v ds r l dut r g v gs v ds v gs 10% 90% t d(on) t r t on t off t d(off) t f v dd -10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time -10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time -10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms FQPF47P06 / FQPF47P06ydtu p-channel mosfet ?2001 fairchild semic onductor corporation FQPF47P06 / FQPF47P06ydtu rev. c0 www.fairc hildsemi.com
peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g compliment of dut (n-channel) v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g compliment of dut (n-channel) v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- FQPF47P06 / FQPF47P06ydtu p-channel mosfet ?2001 fairchild semic onductor corporation FQPF47P06 / FQPF47P06ydtu rev. c0 www.fairc hildsemi.com
FQPF47P06 / FQPF47P06ydtu p-channel mosfet ?2001 fairchild semiconductor corporation FQPF47P06 / FQPF47P06ydtu rev. c0 www.fairc hildsemi.com mechanical d imensions dimensions in millimeters to-220 f
FQPF47P06 / FQPF47P06ydtu p-channel mosfet ?2001 fairchild semiconductor corporation FQPF47P06 / FQPF47P06ydtu rev. c0 www.fairc hildsemi.com mechanical dimensions dimensions in millimeters to-220f (y-forming)
FQPF47P06 / FQPF47P06ydtu p-channel mosfet ?2001 fairchild semiconductor corporation FQPF47P06 / FQPF47P06ydtu rev. c0 www.fairc hildsemi.com trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life su pport, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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